<$emi-dondu(itoi {products, una. 20 stern ave. telephone: (973) 376-2922 springfield, new jersey 07081 (212) 227-6005 usa fax: (973) 376-8960 MCR100 series preferred device sensitive gate silicon controlled rectifiers reverse blocking thyristors pnpn devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. scrs supplied in an inexpensive plastic to-226aa package which is readily adaptable for use in automatic insertion equipment. "?" " 100 thru 600v features ? sensitive gate allows triggering by microcontrollers and other ng logic circuits ao &i ? k ? blocking voltage to 600 v ? on-state current rating of 0.8 a rms at 80c ? high surge current capability - 10 a ? minimum and maximum values of igt, vgt and ih specified to~92 for ease of design ? immunity to dv/dt - 20 v/|xsec minimum at 110c ? glass-passivated surface for reliability and uniformity straight lead bulk pack nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-concluctors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders.
MCR100 series maximum ratings (tj = 25c unless otherwise noted) rating peak repetitive off-state voltage (notes 1 and 2) (tj = -40 to 110c, sine wave, 50 to 60 hz; gate open) MCR100-3 MCR100-4 MCR100-6 MCR100-8 on-state rms current, (tc = 80c) 180 conduction angles peak non-repetitive surge current, (1/2 cycle, sine wave, 60 hz, tj = 25c) circuit fusing consideration, (t = 8.3 ms) forward peak gate power, (ta = 25c, pulse width < 1 .0 (is) forward average gate power, (ta = 25c, t = 8.3 ms) forward peak gate current, (ta = 25c, pulse width < 1.0 us) reverse peak gate voltage, (ta = 25c, pulse width <, 1 .0 us) operating junction temperature range @ rate vrrm and vdrm storage temperature range symbol vdrm, vrrm ij(rms) !tsm i2t pgm pg(av) 'gm vgrm tj tstg value 100 200 400 600 0.8 10 0.415 0.1 0.10 1.0 5.0 -40 to 110 -40 to 1 50 unit v a a a2s w w a v c c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. vdrm and vrrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. see ordering information for exact device number options. thermal characteristics characteristic thermal resistance,junction-to-case junction-to- ambient lead solder temperature ( < 1/16" from case, 10 sees max) symbol rojc rhja tl max 75 200 260 unit c/w c electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min | typ | max | unit off characteristics peak repetitive forward or reverse blocking current (note 2) tc = 25c (vd = rated vdrm and vrrm; rgk = 1 ko) tc = 110c idrm. irrm - _ 10 100 ma on characteristics peak forward on-state voltage* (ltm = 1.0apeak@ta = 25c) gate trigger current (continuous dc) (note 3) tc = 25c (vak = 7.0 vdc, rl= 1000) holding current<2> tc = 25c (vak = 7.0 vdc, initiating current = 20 ma) tc = -40c latch current tc = 25c (vak = 7.0 v, ig = 200 (ia) tc = -40c gate trigger voltage (continuous dc) (note 3) tc = 25c (vak = 7.0 vdc, rl = 1 00 3) tc = -40c vtm igt ih il vgt - - ? - - - 40 0.5 0.6 0.62 1.7 200 5.0 10 10 15 0.8 1.2 v ha ma ma v dynamic characteristics critical rate of rise of off-state voltage (vd = rated vdrm, exponential waveform, rgk = 1000 3,tj = 110c) critical rate of rise of on-state current (ipk = 20 a; pw = 10 |isec; dig/dt = 1 a/|isec, igt = 20 ma) dv/dt di/dt 20 ? 35 ? - 50 v/|is a/us ?indicates pulse test: pulse width < 1.0 ms, duty cycle < 1%. 3. rgk = 1000 q included in measurement. 4. does not include rgk in measurement.
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